zephyr/drivers/flash/flash_stm32l4x.c
Erwan Gouriou 0381e8cbe9 drivers/flash: stm32l4: Handle pages_per_bank for all variants
Variable pages_per_bank has been introduced to ease page erase
in dual bank configurations. This has been implemented using
FLASH_OPTR_DUALBANK definition.
It happen that this was not taking into account L4+ series that
use FLASH_OPTR_DBANK instead of FLASH_OPTR_DUALBANK. This lead
to compilation issue for this driver in case of L4+ series.
So, this patch is adding the support of FLASH_OPTR_DBANK definition.

Besides, FLASH_OPTR_DUALBANK (as FLASH_OPTR_DBANK) are actually
defining availability of an option byte to configure use of Dual
Bank. So besides of its definition, its value in flash OPTR register
should be checked to ensure Dual Bank configuration is used.
This patch is taking this into account by adding the check of this
byte. Error -ENOTSUP is returned in case Single Bank is configured
since it has not be validated yet (in case Dual Bank is possible but
not configured).

Fixes #18246 for nucleo_l4r5zi

Signed-off-by: Erwan Gouriou <erwan.gouriou@linaro.org>
2019-08-17 20:05:21 +02:00

234 lines
5.9 KiB
C

/*
* Copyright (c) 2017 Linaro Limited
* Copyright (c) 2017 BayLibre, SAS
* Copyright (c) 2019 Centaur Analytics, Inc
*
* SPDX-License-Identifier: Apache-2.0
*/
#define LOG_DOMAIN flash_stm32l4
#define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL
#include <logging/log.h>
LOG_MODULE_REGISTER(LOG_DOMAIN);
#include <kernel.h>
#include <device.h>
#include <string.h>
#include <drivers/flash.h>
#include <init.h>
#include <soc.h>
#include "flash_stm32.h"
#if !defined (STM32L4R5xx) && !defined (STM32L4R7xx) && !defined (STM32L4R9xx) && !defined (STM32L4S5xx) && !defined (STM32L4S7xx) && !defined (STM32L4S9xx)
#define STM32L4X_PAGE_SHIFT 11
#else
#define STM32L4X_PAGE_SHIFT 12
#endif
/* offset and len must be aligned on 8 for write
* , positive and not beyond end of flash */
bool flash_stm32_valid_range(struct device *dev, off_t offset, u32_t len,
bool write)
{
return (!write || (offset % 8 == 0 && len % 8 == 0U)) &&
flash_stm32_range_exists(dev, offset, len);
}
/*
* STM32L4xx devices can have up to 512 2K pages on two 256x2K pages banks
*
* STM32L4R/Sxx devices can have up to 512 4K pages on two 256x4K pages banks
*/
static unsigned int get_page(off_t offset)
{
return offset >> STM32L4X_PAGE_SHIFT;
}
static int write_dword(struct device *dev, off_t offset, u64_t val)
{
volatile u32_t *flash = (u32_t *)(offset + CONFIG_FLASH_BASE_ADDRESS);
struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev);
#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
bool dcache_enabled = false;
#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
u32_t tmp;
int rc;
/* if the control register is locked, do not fail silently */
if (regs->cr & FLASH_CR_LOCK) {
return -EIO;
}
/* Check that no Flash main memory operation is ongoing */
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
/* Check if this double word is erased */
if (flash[0] != 0xFFFFFFFFUL ||
flash[1] != 0xFFFFFFFFUL) {
return -EIO;
}
#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
/*
* Disable the data cache to avoid the silicon errata 2.2.3:
* "Data cache might be corrupted during Flash memory read-while-write operation"
*/
if (regs->acr.val & FLASH_ACR_DCEN) {
dcache_enabled = true;
regs->acr.val &= (~FLASH_ACR_DCEN);
}
#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
/* Set the PG bit */
regs->cr |= FLASH_CR_PG;
/* Flush the register write */
tmp = regs->cr;
/* Perform the data write operation at the desired memory address */
flash[0] = (u32_t)val;
flash[1] = (u32_t)(val >> 32);
/* Wait until the BSY bit is cleared */
rc = flash_stm32_wait_flash_idle(dev);
/* Clear the PG bit */
regs->cr &= (~FLASH_CR_PG);
#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
/* Reset/enable the data cache if previously enabled */
if (dcache_enabled) {
regs->acr.val |= FLASH_ACR_DCRST;
regs->acr.val &= (~FLASH_ACR_DCRST);
regs->acr.val |= FLASH_ACR_DCEN;
}
#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
return rc;
}
static int erase_page(struct device *dev, unsigned int page)
{
struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev);
u32_t tmp;
u16_t pages_per_bank;
int rc;
#if !defined(FLASH_OPTR_DUALBANK) && !defined(FLASH_OPTR_DBANK)
/* Single bank device. Each page is of 2KB size */
pages_per_bank = DT_FLASH_SIZE >> 1;
#elif defined(FLASH_OPTR_DUALBANK)
/* L4 series (2K page size) with configurable Dual Bank (default y) */
/* Dual Bank is only option for 1M devices */
if ((regs->optr & FLASH_OPTR_DUALBANK) || (DT_FLASH_SIZE == 1024)) {
/* Dual Bank configuration (nbr pages = flash size / 2 / 2K) */
pages_per_bank = DT_FLASH_SIZE >> 2;
} else {
/* Single bank configuration. This has not been validated. */
/* Not supported for now. */
return -ENOTSUP;
}
#elif defined(FLASH_OPTR_DBANK)
/* L4+ series (4K page size) with configurable Dual Bank (default y)*/
if (regs->optr & FLASH_OPTR_DBANK) {
/* Dual Bank configuration (nbre pags = flash size / 2 / 4K) */
pages_per_bank = DT_FLASH_SIZE >> 3;
} else {
/* Single bank configuration */
/* Requires 128 bytes data read. This config is not supported */
return -ENOTSUP;
}
#endif
/* if the control register is locked, do not fail silently */
if (regs->cr & FLASH_CR_LOCK) {
return -EIO;
}
/* Check that no Flash memory operation is ongoing */
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
/* Set the PER bit and select the page you wish to erase */
regs->cr |= FLASH_CR_PER;
#ifdef FLASH_CR_BKER
regs->cr &= ~FLASH_CR_BKER_Msk;
/* Select bank, only for DUALBANK devices */
if (page >= pages_per_bank)
regs->cr |= FLASH_CR_BKER;
#endif
regs->cr &= ~FLASH_CR_PNB_Msk;
regs->cr |= ((page % pages_per_bank) << 3);
/* Set the STRT bit */
regs->cr |= FLASH_CR_STRT;
/* flush the register write */
tmp = regs->cr;
/* Wait for the BSY bit */
rc = flash_stm32_wait_flash_idle(dev);
regs->cr &= ~FLASH_CR_PER;
return rc;
}
int flash_stm32_block_erase_loop(struct device *dev, unsigned int offset,
unsigned int len)
{
int i, rc = 0;
i = get_page(offset);
for (; i <= get_page(offset + len - 1) ; ++i) {
rc = erase_page(dev, i);
if (rc < 0) {
break;
}
}
return rc;
}
int flash_stm32_write_range(struct device *dev, unsigned int offset,
const void *data, unsigned int len)
{
int i, rc = 0;
for (i = 0; i < len; i += 8, offset += 8U) {
rc = write_dword(dev, offset,
UNALIGNED_GET((const u64_t *) data + (i >> 3)));
if (rc < 0) {
return rc;
}
}
return rc;
}
void flash_stm32_page_layout(struct device *dev,
const struct flash_pages_layout **layout,
size_t *layout_size)
{
static struct flash_pages_layout stm32l4_flash_layout = {
.pages_count = 0,
.pages_size = 0,
};
ARG_UNUSED(dev);
if (stm32l4_flash_layout.pages_count == 0) {
stm32l4_flash_layout.pages_count = FLASH_SIZE / FLASH_PAGE_SIZE;
stm32l4_flash_layout.pages_size = FLASH_PAGE_SIZE;
}
*layout = &stm32l4_flash_layout;
*layout_size = 1;
}